GTRB384608FC-V1

High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz

The GTRB384608FC is a 400 W (P3dB) GaN on SiC amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.  

Product Specifications

Part Number
GTRB384608FC-V1
Description
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz
Min Frequency (MHz)
3300
Max Frequency(MHz)
3800
P3dB Output Power(W)
400
Gain(dB)
12.5
Efficiency(%)
43
Operating Voltage(V)
55
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Asymmetric Doherty Design
  • Pout (avg): 47.5 dBm
  • Pout(3dB): 56.4 dBm
  • Pb-free and RoHS compliant
  • GaN-on-SiC HEMT Technology

Technical Resources

Datasheet


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GTRB384608FC-V1
Amplifier,440W,48V,3300-3800 MHz,GaN-SiC