CGHV40100

100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT

The CGHV40100 is an unmatched; gallium-nitride (GaN)  high-electron-mobility transistor (HEMT). The CGHV40100; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. 

Product Specifications

Part Number
CGHV40100
Description
100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
3000
Peak Output Power(W)
100
Gain(dB)
17.5
Efficiency(%)
55
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • Up to 3 GHz Operation
  • 100 W Typical Output Power
  • 17.5 dB Small Signal Gain at 2.0 GHz
  • Application Circuit for 0.5 - 2.5 GHz
  • 55% Efficiency at PSAT
  • 50 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)


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CGHV40100
100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT