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M02016

1.25 Gbps AGC Pre-Amplifier


Overview

Description

The M02016 CMOS transimpedance amplifier (TIA) with AGC is manufactured in sub-micron CMOS. The AGC gives a wide dynamic range of 35 db. The high transimpedance gain of 24 kΩ gives good sensitivity. For optimum system performance, the M02016 die should be mounted with a silicon or InGaAs PIN photodetector inside a lensed TO-Can or other optical sub-assembly. The M02016 can be used with internal or exteral bias to optimize the PINs performance. A replica of the average photodiode current is available at the MON pad for photo-alignment and signal strength monitoring.

Features

  • Typical -29dBm sensitivity, +6 dBm saturation at 1.25 Gbps when used with 0.9 A/W InGaAs PIN. (Cpd = 0.5pF, BER 10-10)
  • Typical differential transimpedance: 24 kΩ
  • Fabricated in standard CMOS
  • Differential output
  • Standard +3.3 Volt supply
  • PIN or APD sensor
  • Available in die form only
  • Monitor Output
  • AGC provides dynamic range of 35 dBm
  • Internal or external bias for photodiode
  • Same pad layout and die size as M02011/3/4/5
  • Minimum 800 Mhz bandwidth and multi-pole roll-off provide operation to 1.25Gbps

Ordering Information

Part Description Package Pin Count Status
M02016-1AP M02016-1BP (WAFFLE PACKED DIE-UNTESTED) DIE N/A
M02016-2AP M02013-WP-T (PACK DIE TESTED) DIE N/A
M02016-2BP M02012-1BP (WAFFLE PACKED DIE-UNTESTED) DIE N/A
M02016-3A M02016-3A (WAFFLE PACKED DIE) DIE N/A
M02016-3AP M02012-1BP (WAFFLE PACKED DIE-UNTESTED) DIE N/A
M02016-QSPBG M02016-QSPBG TIA SILICON WAFER DIE N/A
M02016-SPBGF M02016-SPBGF DIE N/A
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