CGHV96050F2

50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT

The CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Product Specifications

Part Number
CGHV96050F2
Description
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT
Min Frequency(MHz)
7900
Max Frequency(MHz)
9600
Peak Output Power(W)
50
Gain(dB)
10.0
Efficiency(%)
55
Operating Voltage(V)
40
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 8.4 – 9.6 GHz Operation
  • 80 W POUT typical
  • 10 dB Power Gain
  • 55 % Typical PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGHV96050F2-AMP
AMPLIFIER ASSY, INCLUDES CGHV96050F2
CGHV96050F2-AMP Distributors