General Purpose Broadband 50 V
MACOM's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This product family consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC – 6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.
| Part Number | Description |
|---|---|
| CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
| CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
| CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
| CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
| CGHV40180 | 180 W; DC - 2 GHz; GaN HEMT |
| CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
| CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
| CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
| CGHV40200 | 200 W RF Power GaN HEMT |
| PTVA04250 | High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz |
| CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
| CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
| CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
| CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
| CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
| CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
| PTVA04350 | High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz |