PTVA04350

High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz

The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with bolt-down and earless flanges. Manufactured with an advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA04350
Description
High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz
Min Frequency(MHz)
0
Max Frequency(MHz)
1350
Peak Output Power(W)
350
Gain(dB)
18.0
Efficiency(%)
30
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Earless, Bolt Down
Technology
LDMOS

Features

  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Capable of handling 10:1 VSWR @50 V; 70 W average power (DVB-T 8K OFDM; 64QAM) Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant

Technical Resources

Data Sheet


Order from MACOM

PTVA043502EC-V1
LDMOS RF Transistor, 470?860MHz, 350W, i
PTVA043502FC-V1
LDMOS RF Transistor, 470?860MHz, 350W, i