CMPA2735030

30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Product Specifications

Part Number
CMPA2735030
Description
30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier
Min Frequency(MHz)
2700
Max Frequency(MHz)
3500
Peak Output Power(W)
30
Gain(dB)
30.0
Efficiency(%)
45
Operating Voltage(V)
50
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • Operation up to 50 V
  • High Breakdown Voltage
  • Offered in a 5mm x 5mm; QFN package
  • High Temperature Operation

Technical Resources

Datasheet


Order from MACOM

CMPA2735030D
MMIC, GaN, BARE DIE, DA, 30W, 2.7-3.5GHz
CMPA2735030D Distributors
CMPA2735030S
MMIC, GaN HEMT, G50V3-1C, 30W, 2.7-3.5GH
CMPA2735030S Distributors