GTRA412852FC-V1
High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
The GTRA412852FC is a 235-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA412852FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
- Min Frequency (MHz)
- 3700
- Max Frequency(MHz)
- 4100
- P3dB Output Power(W)
- 235
- Gain(dB)
- 11.5
- Efficiency(%)
- 45
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Input and output matched
- Typical pulsed CW performance; 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP
- Output power at P3dB = 235 W
- Gain = 10 dB
- Efficiency = 45%
- Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
- Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
- GaN on SiC HEMT technology