PTVA035002EV-V1

High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz

The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA035002EV-V1
Description
High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz
Min Frequency(MHz)
390
Max Frequency(MHz)
450
Peak Output Power(W)
450
Gain(dB)
18.0
Efficiency(%)
64
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
LDMOS

Features

  • Unmatched input and output
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS-compliant
  • Capable of withstanding a 13:1 load mismatch at 57 dBm under pulsed conditions: 12 ?sec pulse width; 10% duty cycle

Technical Resources

Datasheet


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PTVA035002EV-V1
LDMOS RF Transistor, 390?450MHz, 400W, i